Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress

The failure behavior and the corresponding physical mechanism of AlGaN/GaN high electron mobility transistors (HEMTs) under transmission line pulse (TLP) stress were investigated in this paper. result shows that output transfer characteristics HEMTs after 90 cycles begin to degrade by comparing with fresh ones 40 V TLP voltage, gate leakage current devices slightly increases. When voltage 52 was applied, a catastrophic occurs for HEMTs. Furthermore, located, micro-morphology abnormal spot observed. metal damaged due large stress. may be mainly attributed Joule heat causes lattice temperature 1160 K as well electric field, it is higher than melting point Au (1064 K) (Au/Ti/Mo). results useful design application electrostatic discharge (ESD)